Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters

Author

Ng, Geok Ing ; Hong, Won-P ; Pavlidis, Dimitrios ; Tutt, Marcel ; Bhattacharya, Pallab K.

Author_Institution

Michigan Univ., Ann Arbor, MI, USA

Volume

9

Issue

9

fYear

1988

Firstpage

439

Lastpage

441

Abstract

The DC and microwave performance of a strained In/sub 0/./sub 65/Ga/sub 0/./sub 35/As/In/sub 0/./sub 52/A1/sub 0/./sub 48/As HEMT (high-electron-mobility transistors) is reported. Its design is based on theoretical and experimental studies including low- and high-field transport characterization of heterostructures with different strains. The intrinsic DC transconductance and cutoff frequence of 1.4- mu m-long gate HEMTs are 574 mS/mm and 38.6 GHz, respectively. The increased indium (In) composition in the channel enhances the drift velocity from 1.35*10/sup 7/ to 1.55*10/sup 7/ cm/s at 300 K.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor technology; solid-state microwave devices; 1.4 micron; 38.6 GHz; DC performance; HEMT; In/sub 0.65/Ga/sub 0.35/As-In/sub 0.52/Al/sub 0.48/As; cutoff frequence; drift velocity; experimental studies; heterostructures with different strains; high-electron-mobility transistors; high-field transport characterization; intrinsic DC transconductance; low-field characterization; microwave performance; optimized transport parameters; strained semiconductor layers; Carrier confinement; Current measurement; Electrons; Frequency; HEMTs; Indium gallium arsenide; Laboratories; Microelectronics; Pulse measurements; Solid state circuits;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.6938

Filename

6938