Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon-doped base

Author

Bhat, Rajaram ; Hayes, R. ; Colas, E. ; Esagui, R.

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

9

Issue

9

fYear

1988

Firstpage

442

Lastpage

443

Abstract

The fabrication of a GaAs/AlGaAs heterojunction bipolar transistor (HBT) having a carbon-doped base is reported. The low diffusion coefficient of carbon makes it attractive for HBT applications since it will prevent out diffusion. The base was grown by atomic layer epitaxy (ALE), from a TMG (trimethylgallium) source that allowed the incorporation of carbon into the layer from the partially related TMG metal carbide. HBTs with common-emitter current gains of 100 were obtained at current densities of 1300 A-cm/sup -2/.<>

Keywords

III-V semiconductors; aluminium compounds; bipolar transistors; carbon; gallium arsenide; p-n heterojunctions; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; ALE; GaAs:C-AlGaAs; HBT; TMG; TMG metal carbide; atomic layer epitaxy; common-emitter current gains; current densities; heterojunction bipolar transistor; low diffusion coefficient; p-type dopant; semiconductors; trimethylgallium; Atomic layer deposition; Bipolar transistors; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; Impurities; Inductors; P-n junctions; Photonic band gap; Semiconductor device doping;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.6939

Filename

6939