Title :
Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon-doped base
Author :
Bhat, Rajaram ; Hayes, R. ; Colas, E. ; Esagui, R.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
The fabrication of a GaAs/AlGaAs heterojunction bipolar transistor (HBT) having a carbon-doped base is reported. The low diffusion coefficient of carbon makes it attractive for HBT applications since it will prevent out diffusion. The base was grown by atomic layer epitaxy (ALE), from a TMG (trimethylgallium) source that allowed the incorporation of carbon into the layer from the partially related TMG metal carbide. HBTs with common-emitter current gains of 100 were obtained at current densities of 1300 A-cm/sup -2/.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; carbon; gallium arsenide; p-n heterojunctions; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; ALE; GaAs:C-AlGaAs; HBT; TMG; TMG metal carbide; atomic layer epitaxy; common-emitter current gains; current densities; heterojunction bipolar transistor; low diffusion coefficient; p-type dopant; semiconductors; trimethylgallium; Atomic layer deposition; Bipolar transistors; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; Impurities; Inductors; P-n junctions; Photonic band gap; Semiconductor device doping;
Journal_Title :
Electron Device Letters, IEEE
