Low-threshold CW operation of square-shaped semiconductor ring lasers (orbiter lasers)

Author

Oku, Satoshi ; Okayasu, Masanobu ; Ikeda, Masahiro

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

3

Issue

7

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

588

Lastpage

590

Abstract

The CW operation of square-shaped semiconductor ring lasers is demonstrated with a threshold current as low as 6 mA. The ring resonator consists of straight waveguides and four total reflection mirrors. The lasers are fabricated using Br/sub 2/ dry etching on an InGaAs/GaAs strained single-quantum-well graded-index separate-confinement heterostructure wafer. The low-threshold CW operation is due to the high differential gain of the wafer and the low-loss total reflection mirror.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser accessories; mirrors; ring lasers; semiconductor junction lasers; 6 mA; Br/sub 2/ dry etching; CW operation; InGaAs-GaAs; graded-index; high differential gain; low-loss total reflection mirror; low-threshold; orbiter lasers; ring resonator; semiconductors; separate-confinement heterostructure; square-shaped semiconductor ring lasers; straight waveguides; strained single-quantum-well; threshold current; Dry etching; Indium gallium arsenide; Mirrors; Optical reflection; Optical ring resonators; Ring lasers; Semiconductor lasers; Semiconductor waveguides; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.87922

Filename

87922