Title :
Low series resistance high-efficiency GaAs/AlGaAs vertical-cavity surface-emitting lasers with continuously graded mirrors grown by MOCVD
Author :
Zhou, P. ; Cheng, Julian ; Schaus, C.F. ; Sun, S.Z. ; Zheng, K. ; Armour, E. ; Hains, C. ; Hsin, Wei ; Myers, D.R. ; Vawter, G.A.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
fDate :
7/1/1991 12:00:00 AM
Abstract :
GaAs/AlGaAs vertical-cavity top-surface-emitting lasers (VCSELs) with a continuously graded mirror composition have been grown by MOCVD, and planar devices with proton-implant current confinement have been characterized. Continuous grading of the heterointerfaces in the Bragg reflectors eliminated the energy-band discontinuities, thus improving carrier transport and resulting in a substantial reduction in the series resistance and threshold voltage of the laser diodes. These VCSELs have excellent room-temperature CW electrical characteristics, including some of the lowest series resistances, highest power efficiencies and lowest operating voltages ever reported.<>
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; gradient index optics; laser accessories; mirrors; semiconductor growth; semiconductor junction lasers; Bragg reflectors; GaAs-AlGaAs; MOCVD; carrier transport; continuously graded mirrors; energy-band discontinuities; heterointerfaces; high-efficiency; laser diodes; low series resistance; operating voltages; planar devices; power efficiencies; proton-implant current confinement; room-temperature CW electrical characteristics; semiconductors; threshold voltage; top-surface-emitting lasers; vertical-cavity; Carrier confinement; Diode lasers; Electric resistance; Gallium arsenide; MOCVD; Mirrors; Surface emitting lasers; Surface resistance; Threshold voltage; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
