Title :
The effect of substrate doping on the performance of anode-shorted n-channel lateral insulated-gate bipolar transistors
Author :
Chow, T. Paul ; Baliga, B.Jayant ; Pattanayak, Deva N. ; Adler, Memichael S.
Author_Institution :
Gen. Electr. Co., Schenectady, NY, USA
Abstract :
The performance of n-channel lateral-insulated-gate bipolar transistors (n-LIGBTs) with anode shorts on p/sup -/ epi/p/sup +/ substrates is compared to that of anode-shorted n-LIGBTs on p/sup -/ substrates, as well as to that of conventional n-LIGBTs on either substrate. It is shown that both forward-voltage drop and turn-off time are better for anode-shorted devices fabricated on p/sup -/ epi/p/sup +/ substrate than for those on p/sup -/ substrates, due to a larger percentage component of vertical bipolar current and a lower collector resistance. Forward-voltage drops of 3.05 and 3.3 V at 133 A/cm/sup 2/ and turn-off times of 400 and 750 ns have been measured for devices on p/sup -/ epi/p/sup +/ and p/sup -/ substrates respectively. All the LIGBTs showed current limiting at two to four times the ON-state conduction current during dynamic switching.<>
Keywords :
bipolar transistors; power transistors; semiconductor switches; 3.05 V; 3.3 V; 400 ns; 750 ns; LIGBTs; anode-shorted devices; collector resistance; current limiting; dynamic switching; effect of substrate doping; forward-voltage drop; lateral IGBT; n-channel lateral insulated-gate bipolar transistors; p/sup -/ epi/p/sup +/ substrates; p/sup -/ substrates; performance; turn-off time; vertical bipolar current; Anodes; Cathodes; Current limiters; Doping; Electrical resistance measurement; Insulated gate bipolar transistors; Insulation; Power electronics; Voltage;
Journal_Title :
Electron Device Letters, IEEE
