DocumentCode :
1400069
Title :
Diagnostics of asymmetrically coated semiconductor lasers
Author :
Hamel, W.A. ; Babeliowsky, M. ; Woerdman, J.P. ; Acket, G.A.
Author_Institution :
Huygens Lab., Leiden Univ., Netherlands
Volume :
3
Issue :
7
fYear :
1991
fDate :
7/1/1991 12:00:00 AM
Firstpage :
600
Lastpage :
602
Abstract :
The authors present a simple diagnostic procedure for lasers that have a priori unknown facet reflectivities. The most important laser parameters that can be extracted are the cavity decay rate Gamma /sub c/ (equal to the inverse of the photon lifetime), the mirror loss coefficient alpha /sub m/ identical to -1/2 L In R/sub 1/R/sub 2/, the internal loss coefficient alpha /sub i/, the facet reflection coefficients R/sub 1/ and R/sub 2/, the spontaneous emission factor n/sub sp/, and the differential gain xi /sub l/. The authors have verified the procedure by applying it to lasers with a priori known facet reflection coefficients, these lasers were weakly index guided (VSIS and CSP types).<>
Keywords :
laser theory; mirrors; reflectivity; semiconductor junction lasers; a priori unknown facet reflectivities; asymmetrically coated semiconductor lasers; cavity decay rate; diagnostic procedure; differential gain; diode lasers; facet reflection coefficients; internal loss coefficient; laser parameters; mirror loss coefficient; photon lifetime; spontaneous emission factor; weakly index guided; Current measurement; Laboratories; Optical arrays; Photodiodes; Power generation; Power lasers; Power measurement; Semiconductor device measurement; Semiconductor laser arrays; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.87926
Filename :
87926
Link To Document :
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