Nonlinear gain suppression in semiconductor lasers due to carrier heating

Author

Willatzen, M. ; Uskov, A. ; Mørk, J. ; Olesen, H. ; Tromborg, B. ; Jauho, A.-P.

Author_Institution

TFL Telecommun. Res. Lab., Horsholm, Denmark

Volume

3

Issue

7

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

606

Lastpage

609

Abstract

A simple model is presented for carrier heating in semiconductor lasers from which the temperature dynamics of the electron and hole distributions can be calculated. Analytical expressions for two new contributions to the nonlinear gain coefficient, in are derived, which reflect carrier heating due to stimulated emission and free carrier absorption. In typical cases, carrier heating and spectral holeburning are found to give comparable contributions to nonlinear gain suppression. The results are in good agreement with recent measurements on InGaAsP laser diodes.<>

Keywords

laser theory; light absorption; nonlinear optics; optical hole burning; semiconductor junction lasers; stimulated emission; InGaAsP laser diodes; carrier heating; electron distributions; free carrier absorption; hole distributions; nonlinear gain coefficient; nonlinear gain suppression; semiconductor lasers; spectral holeburning; stimulated emission; temperature dynamics; Charge carrier processes; Electromagnetic scattering; Heating; Laser modes; Laser theory; Particle scattering; Semiconductor lasers; Spontaneous emission; Stimulated emission; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.87928

Filename

87928