Title :
Hot-electron reliability and ESD latent damage
Author :
Aur, Shian ; Chatterjee, Amitava ; Polgreen, Thomas
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
The impact of noncatastrophic electrostatic discharge (ESD) stress on hot-electron reliability as well as the effect of hot-electron (HE) injection on the ESD protection threshold are discussed. It is found that there is a factor-of-two-to-four deterioration in hot-electron reliability after low-level ESD stress. These two effects can be viewed as similar although HE is a low-current long-time process and ESD is a high-current short-time process. Therefore, techniques for characterizing hot-electron degradation were applied to measure quantitatively the damage due to ESD stress. This technique showed electrical evidence of current filaments during an ESD discharge
Keywords :
VLSI; electrostatic discharge; failure analysis; field effect integrated circuits; hot carriers; integrated circuit technology; reliability; ESD discharge; ESD latent damage; ESD protection threshold; VLSI; characterizing hot-electron degradation; current filaments; deterioration; electrical evidence; electrostatic discharge; hot electron injection effect; hot-electron reliability; low-level ESD stress; noncatastrophic ESD stress; Degradation; Electrostatic discharge; Helium; MOSFETs; Protection; Secondary generated hot electron injection; Stress; Substrates; Threshold current; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on