Title :
Amorphous SiGe:H photodetectors on glass optical waveguides
Author :
Deimel, P.P. ; Heimhofer, B.B. ; Krötz, G. ; Lilienhof, H.J. ; Wind, J. ; Müller, G. ; Voges, E.
Author_Institution :
Messerschmitt Bolkow-Blohm GmbH, Munchen, West Germany
fDate :
7/1/1990 12:00:00 AM
Abstract :
Amorphous SiGe:H thin-film photodetectors integrated with ion-exchanged optical waveguides on glass are discussed. The lateral coupling between single-mode waveguide and detector is provided via an intermediate indium-tin-oxide transparent electrode located above the waveguide, followed by a p-i-n photodetector. The optical coupling between waveguide and detector depends strongly on the polarization of the incoming optical mode in the waveguide. Using a random optical bitstream in the waveguide, the detector, which is not yet optimized, responds to signals up to about 20 Mb/s NRZ (nonreturn-to-zero).<>
Keywords :
hydrogen; integrated optics; optical waveguides; p-i-n diodes; photodetectors; silicon compounds; 20 Mbit/s; ITO; In/sub x/Sn/sub y/O/sub z/; InSnO; SiGe:H photodetectors; amorphous thin film photodetectors; glass; integrated optics; ion-exchanged optical waveguides; lateral coupling; nonreturn-to-zero; optical coupling; optical mode polarisation; p-i-n photodetector; random optical bitstream; single-mode waveguide; transparent electrode; Amorphous materials; Detectors; Electrodes; Glass; Integrated optics; Optical coupling; Optical films; Optical waveguides; PIN photodiodes; Photodetectors;
Journal_Title :
Photonics Technology Letters, IEEE
