Title :
Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K
Author :
Laux, Steven E. ; Fischetti, M.V.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Monte Carlo simulation results for small silicon n-MOSFETs at 77 and 300 K are presented. A complete description of the silicon band structure including consistent scattering rates, electron-electron scattering, and plasma effects is included in the calculation for the first time. The dependence of transconductance on channel length is in excellent agreement with the experiments of G.A. Sai-Halasz et al. (see ibid., vol.EDL-8, p.463-6, Oct. 1987 and ibid., vol.EDL-9, p.464-6, Sep. 1988) and serves to support the expectation of significant velocity overshoot in these devices. For extremely short channels (>
Keywords :
Monte Carlo methods; digital simulation; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; 1.5 V; 100 nm; 300 K; 77 K; Monte Carlo simulation; NMOS; Si; band structure; consistent scattering rates; dependence of transconductance on channel length; drain biases; electron-electron scattering; experiments; extremely short channels; n-MOSFETs; plasma effects; velocity overshoot; Acoustic scattering; Electrons; Impact ionization; Kinetic energy; MOSFET circuits; Optical scattering; Particle scattering; Physics; Plasma devices; Silicon;
Journal_Title :
Electron Device Letters, IEEE
