Title :
Reduction of the short-channel effects for GaAs MESFETs by double shallow n/sup +/-layers
Author :
Enoki, Takatomo ; Sugitani, Suehiro ; Yamaski, K. ; Ohwada, Kuniki
Author_Institution :
LSI Lab., NTT, Kanagawa, Japan
Abstract :
In order to suppress the short-channel effects of subquarter-micrometer gate-length GaAs MESFETs, it is necessary to fabricate shallow n/sup +/ layers without any increase of parasitic resistance. To advance this line of research, a double shallow n/sup +/-layer structure was investigated using a T-shaped resist mask and oblique ion implantation. Employing this shallow n/sup +/-layer structure, the threshold-voltage shift was suppressed and the subthreshold characteristics were improved for subquarter-micrometer gate-length FETs. A transconductance of 500 mS/mm for the 0.15- mu m gate-length FET and a cutoff frequency of 33 GHz for the 0.35- mu m gate-length FET were obtained.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; semiconductor technology; solid-state microwave devices; 150 nm; 33 GHz; 350 nm; EHF; GaAs; MESFETs; T-shaped resist mask; cutoff frequency; double shallow n/sup +/-layer structure; oblique ion implantation; parasitic resistance; short-channel effects reduction; subquarter micron gate lengths; subquarter-micrometer gate-length; subthreshold characteristics; threshold-voltage shift; transconductance; Capacitance; Cutoff frequency; FETs; Gallium arsenide; Ion implantation; Leakage current; Lithography; MESFETs; Resists; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
