A new hybrid VDMOS-LIGBT transistor

Author

Chow, T. Paul ; Baliga, B.Jayant

Author_Institution

Gen. Electr. Co., Schenectady, NY, USA

Volume

9

Issue

9

fYear

1988

Firstpage

473

Lastpage

475

Abstract

A p-channel vertical DMOSFET structure coupled with a lateral IGBT (insulated-gate bipolar transistors) path is described. External resistors are placed in series with either the collector terminal (the bipolar-enhanced MOSFET (BIENFET) mode) or the drain terminal (the substrate collector-shorted (SCOSH) LIGBT mode) to vary the degree of minority-carrier injection. This creates the opportunity to obtain a device with externally programmable forward-drop/switching speed tradeoff. The device is shown experimentally to have forward drops close to those of vertical and lateral IGBTs and turn-off times close to that of MOSFETs. Typical forward drops at 93 A/cm/sup 2/ range from 3-4 V and corresponding turn-off times from 4.3 to 0.22 mu s when the drain resistor is varied. This device is considered particularly attractive as a high-frequency and high-voltage power switch.<>

Keywords

bipolar transistors; power transistors; semiconductor switches; semiconductor technology; 3 to 4 V; 4.3 to 0.22 mus; LIGBT mode; MOSFET mode; bipolar-enhanced MOSFET; degree of minority-carrier injection; drain resistor; external resistors; externally programmable forward-drop/switching speed tradeoff; forward drops; high frequency power switch; high-voltage power switch; hybrid VDMOS-LIGBT transistor; insulated-gate bipolar transistors; lateral IGBT; p-channel vertical DMOSFET structure; substrate collector-shorted; turn-off times; vertical DMOS transistor; Electrons; Insulated gate bipolar transistors; Joining processes; MOSFET circuits; Power MOSFET; Power supplies; Protons; Resistors; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.6949

Filename

6949