DocumentCode :
1400262
Title :
GaAs MOSFET using MBE-grown Ga2O3 (Gd2 O3) as gate oxide
Author :
Kim, S.-J. ; Park, J.-W. ; Hong, M. ; Mannaerts, J.P.
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Volume :
145
Issue :
3
fYear :
1998
fDate :
6/1/1998 12:00:00 AM
Firstpage :
162
Lastpage :
164
Abstract :
An enhancement mode GaAs metal-oxide-semiconductor field effect transistor (MOSFET) with Ga2O3 (Gd2O 3) as gate dielectric has been successfully fabricated. The low interface density Ga2O3 (Gd2O3 ) oxide and GaAs n-channel layer were grown by in situ molecular beam epitaxy (MBE). The fabricated n-channel MOSFET with 20 nm-thick oxide and 2 μm-long gate operated both in enhancement and depletion modes, with a peak transconductance of 40 mS/mm in the enhancement mode. While operating with gate voltages ranging from -1 to 5 V, the device showed a drain current drift of 10.5% for a duration of 104s, a limited amount of hysteresis and negligible dispersion of transconductance from 10 Hz to 1 MHz
Keywords :
III-V semiconductors; MOSFET; gadolinium compounds; gallium arsenide; gallium compounds; molecular beam epitaxial growth; -1 to 5 V; 10 Hz to 1 MHz; Ga2O3(Gd2O3) gate oxide; GaAs n-channel MOSFET; GaAs-Ga2O3:Gd2O3; MBE growth; depletion mode; drain current; enhancement mode; interface density; transconductance;
fLanguage :
English
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2409
Type :
jour
DOI :
10.1049/ip-cds:19981873
Filename :
694941
Link To Document :
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