DocumentCode :
1400269
Title :
Novel low-cost, low-power modulator/demodulator using a single GaAs field effect transistor
Author :
Carrez, F. ; Stolle, R.
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
Volume :
145
Issue :
3
fYear :
1998
fDate :
6/1/1998 12:00:00 AM
Firstpage :
165
Lastpage :
169
Abstract :
A novel type of transponder circuit for localisation and identification purposes is presented. The complete circuit contains only one semiconductor device, a `cold´ field effect transistor, which performs both the modulator and the demodulator functions. This makes possible the realisation of a low-cost, low-power, high-performance 10 GHz transponder in miniature format. The design of the circuit makes use of simple and reliable methods for the modulator function. The demodulator is a FET detector, which exploits the nonlinear channel resistance of the transistor instead of the Schottky barrier. A theory of this type of detector is given
Keywords :
III-V semiconductors; MESFET circuits; gallium arsenide; microwave field effect transistors; modems; transponders; 10 GHz; FET detector; GaAs; GaAs field effect transistor; cold MESFET; low-power modulator/demodulator; nonlinear channel resistance; semiconductor device; transponder circuit;
fLanguage :
English
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2409
Type :
jour
DOI :
10.1049/ip-cds:19981871
Filename :
694942
Link To Document :
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