InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

Author

Liu, Wen-Chau ; Cheng, Shiou-Ying ; Tsai, Jung-Hui ; Lin, Po-Hung ; Chen, Jing-Yuh ; Wang, Wei-Chou

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

18

Issue

11

fYear

1997

Firstpage

515

Lastpage

517

Abstract

In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (/spl Delta/E/sub v/) at the InGaP/GaAs heterointerface, a high current gain (/spl beta//sub max//spl sime/220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage (I-V) characteristics at room temperature.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; minority carriers; negative resistance; resonant tunnelling transistors; semiconductor superlattices; 5-period InGaP/GaAs superlattice; I-V characteristics; InGaP-GaAs; InGaP/GaAs heterointerface; InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor; N-shaped negative-differential-resistance phenomena; forward-active region; high current gain; minority carrier confinement barrier; room temperature; saturation region; valence band discontinuity; Bipolar transistors; Carrier confinement; Conducting materials; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Resonant tunneling devices; Superlattices; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.641430

Filename

641430