Measurement of carrier lifetime and linewidth enhancement factor for 1.5- mu m ridge-waveguide laser amplifier

Author

Storkfelt, N. ; Mikkelsen, B. ; Olesen, D.S. ; Yamaguchi, M. ; Stubkjaer, K.E.

Author_Institution

Electromagn. Inst., Tech. Univ. of Denmark, Lyngby, Denmark

Volume

3

Issue

7

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

632

Lastpage

634

Abstract

Semiconductor optical amplifiers are used for investigation of the effective carrier lifetime and the linewidth enhancement factor. Contrary to semiconductor lasers, semiconductor optical amplifiers allow measurement at high levels of injected carrier density. The carrier lifetime and the linewidth enhancement factor are measured with a simple dynamic self-heterodyne method. Carrier lifetimes of 750 ps at the threshold current for the SOA without antireflection coating and 200 ps at high injection have been found. The linewidth enhancement factor is measured to be between 4 and 17 which fits with a simple empirical expression.<>

Keywords

carrier density; carrier lifetime; laser variables measurement; optical waveguides; semiconductor junction lasers; spectral line breadth; 1.5 micron; 200 ps; 750 ps; diode lasers; dynamic self-heterodyne method; effective carrier lifetime; high injection; injected carrier density; linewidth enhancement factor; ridge-waveguide laser amplifier; semiconductor optical amplifiers; spectral linewidth; threshold current; Amplitude modulation; Charge carrier density; Charge carrier lifetime; Frequency modulation; Optical amplifiers; Optical mixing; Optical refraction; Optical variables control; Semiconductor lasers; Semiconductor optical amplifiers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.87936

Filename

87936