Title :
High-voltage operation of field-effect transistors in silicon carbide
Author :
Konstantinov, A.O. ; Ivanov, P.A. ; Nordell, N. ; Karlsson, S. ; Harris, C.I.
Author_Institution :
ABB Corp. Res., Stockholm, Sweden
Abstract :
Buried-gate field-effect transistors with blocking voltages up to 600-700 V have been fabricated in 6H polytype silicon carbide using a trench technology. The devices achieve drain currents of up to 60 mA for a channel width of 0.72 mm and have a turn off gate voltage of about 40 V. We report on the device characteristics and analyze the performance under high-voltage device operation.
Keywords :
buried layers; capacitance; characteristics measurement; junction gate field effect transistors; power field effect transistors; semiconductor technology; silicon compounds; wide band gap semiconductors; 40 V; 60 mA; 600 to 700 V; 6H-SiC; C-V characteristics; I-V characteristics; SiC; blocking voltages; buried-gate JFET; buried-gate field-effect transistors; channel width; common-source characteristics; device characteristics; drain currents; high-voltage operation; trench technology; turn off gate voltage; Breakdown voltage; Contacts; Electric breakdown; Etching; FETs; Fabrication; MOSFETs; Nitrogen; Performance analysis; Silicon carbide;
Journal_Title :
Electron Device Letters, IEEE
