Title :
The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing
Author :
Kao, Chyuan Haur ; Lai, Chao Sung ; Lee, Chung Len
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm/sup 2/). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA.
Keywords :
chemical vapour deposition; dielectric thin films; electric breakdown; elemental semiconductors; oxidation; phosphorus; rapid thermal annealing; semiconductor-insulator boundaries; silicon; AFM; RTA; Si:P; SiO/sub 2/-Si:P; TEOS CVD oxide deposition; charge to breakdown; electrical characteristics; high breakdown field; in situ P doped polysilicon; inter-polyoxide; polysilicon surface smoothness; positive bias; rapid thermal annealing; trapping density reduction; Atomic force microscopy; Chaos; Design for quality; Electric breakdown; Electric variables; Grain boundaries; Nonvolatile memory; Rapid thermal annealing; Surface morphology; Temperature;
Journal_Title :
Electron Device Letters, IEEE
