Title :
Numerical and analytic techniques to study capacitive RF discharges
Author :
Gupta, N. ; Raju, G. R Govinda
Author_Institution :
Dept. of Electr. Eng., Windsor Univ., Ont., Canada
fDate :
10/1/2000 12:00:00 AM
Abstract :
Capacitively coupled RF plasma sources are used extensively in the microelectronics industry for commercial production as well as laboratory research and development. This paper deals with the physics of the processes involved and development, both theoretical and analytical, that have helped in understanding the discharge processes. The review begins with a description of the RF discharge. A literature survey provides the experimental efforts that have been directed towards investigating the physics of the capacitively coupled discharges. Measurements of the various plasma parameters are dealt with. Analytical and numerical methods that have been successfully used to model the discharge processes are treated in considerable detail. The paper concludes with a brief comparison of the various techniques
Keywords :
high-frequency discharges; integrated circuit technology; plasma applications; reviews; capacitive RF discharges; capacitively coupled RF plasma sources; discharge processes; microelectronics industry; plasma parameters; Electrodes; Etching; Fault location; Inductors; Physics; Plasma applications; Plasma chemistry; Plasma materials processing; Radio frequency; Surface discharges;
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on