Title :
A novel in situ vacuum encapsulated lateral field emitter triode
Author :
Cheol-Min Park ; Moo-Sup Lim ; Min-Koo Han
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
We have designed and fabricated a novel lateral field emitter triode, which is in situ vacuum encapsulated so that any troublesome additional vacuum sealing process is not required. The device exhibits low turn-on voltage of 7 V, stable current density of 2 μA per tip, and high transconductance of 1.7 μS per 100 tips field emitter array at V/sub AC/=22 V. An in situ vacuum encapsulation employing recessed cavities by isotropic RIE (reactive ion etch) method and an electron beam evaporated molybdenum vacuum seal are implemented to fabricate the new field emitter triode. The superb field emitter characteristics are probably due to sub-micron dimension device structure and the pencil type lateral cathode tip employing upper and lower LOCOS oxidation.
Keywords :
electron field emission; encapsulation; oxidation; seals (stoppers); semiconductor device packaging; sputter etching; vacuum microelectronics; vacuum techniques; 1.7 muS; 22 V; 7 V; LOCOS oxidation; Mo; SiO/sub 2/-Si/sub 3/N/sub 4/-Si; current density; electron beam evaporated Mo vacuum seal; field emitter array; field emitter characteristics; high transconductance; in situ vacuum encapsulation; isotropic RIE; lateral field emitter triode; low turn-on voltage; pencil type lateral cathode tip; recessed cavities; submicron dimension device structure; Cathodes; Current density; Electron beams; Encapsulation; Etching; Field emitter arrays; Low voltage; Oxidation; Seals; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
