Title :
Diamond surface-channel FET structure with 200 V breakdown voltage
Author :
Gluche, P. ; Aleksov, A. ; Vescan, A. ; Ebert, W. ; Kohn, E.
Author_Institution :
Dept. of Electron. Devices & Circuits, Ulm Univ., Germany
Abstract :
An enhancement mode diamond FET using a hydrogen-terminated surface as hole conductive channel has been fabricated with 200 V gate to drain breakdown voltage. At the 8.5-μm gate length the maximum drain current was 22 mA/mm. 90 mA/mm maximum drain current was obtained at a gate length of 3.0 μm. Scaling to below 1 μm gate length assuming undegraded breakdown conditions will result in a projected RF power handling capability above 6 W/mm.
Keywords :
diamond; electric breakdown; elemental semiconductors; power MESFET; 20 V; 3 to 8.5 mum; C; H-terminated surface; RF power handling capability; diamond surface-channel FET structure; enhancement mode diamond FET; gate length; gate to drain breakdown voltage; hole conductive channel; maximum drain current; scaling; single gate MESFET structure; Electric breakdown; FETs; Hydrogen; Insulation; Plasma applications; Plasma devices; Plasma sources; Plasma temperature; Radio frequency; Surface treatment;
Journal_Title :
Electron Device Letters, IEEE
