DocumentCode
1400364
Title
Co-Occurrence of Threshold Switching and Memory Switching in 
Cells for Crosspoint Memory Applications
Author
Liu, Xinjun ; Sadaf, Sharif Md ; Son, Myungwoo ; Park, Jubong ; Shin, Jungho ; Lee, Wootae ; Seo, Kyungah ; Lee, Daeseok ; Hwang, Hyunsang
Author_Institution
Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Volume
33
Issue
2
fYear
2012
Firstpage
236
Lastpage
238
Abstract
To integrate bipolar resistive switching cells into crosspoint structures, we serially connect a threshold-switching (TS) Pt/NbO2/Pt device with a memory-switching (MS) Pt/Nb2O5/ Pt device and observe the suppression of the undesired sneak current. A simpler Pt/Nb2O5/NbO2/Pt bilayer oxide device was designed; it simultaneously exhibits TS and MS. The unique device characteristics in the metal/oxide/metal structure can be directly integrated into a crosspoint memory array without the diode; this can significantly reduce the fabrication complexity.
Keywords
integrated circuit design; integrated circuit manufacture; integrated memory circuits; niobium compounds; platinum; semiconductor diodes; Pt-Nb2O5-NbO2-Pt; bilayer oxide device; crosspoint memory array; diode; integrate bipolar resistive switching cells; memory switching device; threshold switching device; undesired sneak current suppression; Arrays; Materials; Niobium; Resistance; Switches; Threshold voltage; Crosspoint memory; niobium oxide; nonvolatile memory; resistive switching (RS); threshold switching (TS);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2174452
Filename
6105515
Link To Document