Very high temperature operation of diamond Schottky diode

Author

Vescan, A. ; Daumiller, I. ; Gluche, P. ; Ebert, W. ; Kohn, E.

Author_Institution

Dept. of Electron. Devices & Circuits, Ulm Univ., Germany

Volume

18

Issue

11

fYear

1997

Firstpage

556

Lastpage

558

Abstract

For the first time, the operating temperature of a Schottky diode structure has been pushed to 1000/spl deg/C. The diode structure consists of a Si-based Schottky material deposited onto a homoepitaxial boron doped diamond surface. At high temperatures, the forward I-V characteristics are dominated by the thermionic emission (n/spl ap/1.01) across a barrier of 1.9 eV height. The reverse characteristics are still dominated by thermally activated defects. The series resistance shows thermal activation associated with the boron doping.

Keywords

Schottky diodes; boron; diamond; doping profiles; elemental semiconductors; high-temperature techniques; leakage currents; semiconductor doping; 25 to 1000 C; C:B; Richardson plot; Si-C:B; Si-based Schottky material; diamond Schottky diode; forward I-V characteristics; homoepitaxial B-doped diamond surface; operating temperature; reverse characteristics; series resistance; thermal activation; thermally activated defects; thermionic emission; very high temperature operation; Boron; Doping profiles; Photonic band gap; Plasma immersion ion implantation; Plasma measurements; Plasma temperature; Schottky diodes; Semiconductor diodes; Temperature distribution; Thermal resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.641444

Filename

641444