A tunable-frequency Gunn diode fabricated by focused ion-beam implantation

Author

Lezec, Henri J. ; Ismail, Khalid ; Mahoney, Leonard J. ; Shepard, Mark I. ; Antoniadis, Dimitri A. ; Melngailis, J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

9

Issue

9

fYear

1988

Firstpage

476

Lastpage

478

Abstract

The fabrication of a planar Gunn diode in which the fundamental transit-time model oscillation frequency can be tuned over the range 6-23 GHz by varying the DC bias across the device is reported. The wide-band tunability is due to a linear doping-concentration gradient between the contacts. This lateral doping is created by implanting the device with a focused beam of silicon ions and smoothly increasing the dose from contact to contact. A Gunn diode with a uniform active region, also fabricated with the focused ion beam, displays a relatively constant oscillation frequency in the same bias range.<>

Keywords

Gunn oscillators; ion implantation; semiconductor doping; solid-state microwave devices; tuning; variable-frequency oscillators; 6 to 23 GHz; DC bias; Gunn oscillator; SHF; fabrication; focused ion-beam implantation; fundamental transit-time model oscillation frequency; lateral doping; linear doping-concentration gradient; microwave VCO; planar Gunn diode; tunable-frequency Gunn diode; wide-band tunability; Diodes; Displays; Doping; Fabrication; Frequency; Gunn devices; Ion beams; Semiconductor process modeling; Silicon; Wideband;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.6950

Filename

6950