InGaP/GaAs heterojunction bipolar transistor grown on a semi-insulating InGaP buffer layer

Author

Ahmari, D.A. ; Fresina, M.T. ; Hartmann, Q.J. ; Barlage, D.W. ; Feng, M. ; Stillman, G.E.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

18

Issue

11

fYear

1997

Firstpage

559

Lastpage

561

Abstract

To improve electrical isolation and simplify the heterojunction bipolar transistor (HBT) fabrication process, a semi-insulating InGaP buffer layer has been employed in an InGaP/GaAs HBT. Data is presented that demonstrates this buffer layer serves as an excellent isolation material. In addition, high-frequency HBT´s have been fabricated and characterized to show that the buffer layer does not degrade device performance.

Keywords

III-V semiconductors; etching; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; isolation technology; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor growth; vapour phase epitaxial growth; 1.5 V; 110 GHz; 18 mA; 65 GHz; Gummel plot; I-V characteristics; InGaP; InGaP-GaAs; InGaP/GaAs heterojunction bipolar transistor growth; LP-MOCVD; cutoff frequency; electrical isolation; etch isolation height; fabrication process simplification; high-frequency HBT; maximum frequency of oscillation; resistor structures; semi-insulating InGaP buffer layer; Buffer layers; Conductivity; Degradation; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; MOCVD; Molecular beam epitaxial growth; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.641445

Filename

641445