17.3% efficiency metal-oxide-semiconductor (MOS) solar cells with liquid-phase-deposited silicon dioxide

Author

Lee, Kuo-Chung ; Hwu, Jenn-Gwo

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

18

Issue

11

fYear

1997

Firstpage

565

Lastpage

567

Abstract

Simple and high efficiency silicon metal-oxide semiconductor (MOS) solar cells, with silicon dioxide prepared by a room-temperature liquid phase deposition (LPD) method, are proposed. The thickness of LPD oxide is about 5 nm. After adding a 2/spl sim/5 nm semi-transparent thin Al film between the 200 nm patterned Al cathode, all the solar cells´ performance parameters are improved. For a cell exposed under 15 mW/cm/sup 2/, short-circuit current density J/sub SC/ up to 10.7 mA/cm/sup 2/, open-circuit voltage V/sub OC/ up to 412 mV, fill factor FF up to 59, and record effective conversion efficiency /spl eta/ up to 17.3% are obtained for this structure. Photo-conductivity properties of LPD oxide are found and the mechanism is discussed.

Keywords

MIS devices; aluminium; current density; electroless deposition; photoconductivity; short-circuit currents; silicon; silicon compounds; solar cells; tunnelling; 17.3 percent; 2 to 5 nm; Al-SiO/sub 2/-Si; LPD oxide thickness; MOS solar cells; effective conversion efficiency; fill factor; liquid-phase-deposited SiO/sub 2/; open-circuit voltage; patterned Al cathode; photoconductivity property; room-temperature liquid phase deposition; semi-transparent thin Al film; short-circuit current density; solar cell performance parameters; trap-assisted tunneling; Cathodes; Current density; Insulation; Liquid crystal displays; Photovoltaic cells; Silicon compounds; Substrates; Temperature; Thickness control; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.641447

Filename

641447