Title :
A planar amorphous Si/sub 1-x/Gex Separated-Absorption-Multiplication avalanche photo diode
Author :
Torres-J., A. ; Gutierrez-D., E.A.
Author_Institution :
INAOE, Puebla, Mexico
Abstract :
We report a simple innovative and CMOS compatible planar Separated-Absorption-Multiplication (SAM) amorphous Si/sub 1-x/Ge/sub x/ avalanche photo diode (SAMAPD) for short-distance optical-fiber communication systems. The spectral response of this SAMAPD extends up to 0.93 μm with a bandwidth of 1.9 GHz. Due to its low-temperature process budget it can be post-fabricated in a CMOS wafer, which makes it ideal for building monolithic submicron CMOS fiber optic detector systems.
Keywords :
CMOS integrated circuits; Ge-Si alloys; amorphous semiconductors; avalanche photodiodes; fluorine; hydrogen; integrated optoelectronics; optical receivers; 0.3 to 0.93 mum; 1.9 GHz; CMOS wafer; OEIC; Si/sub 0.67/Ge/sub 0.33/:H,F; absorption layer characteristics; low-temperature process budget; monolithic submicron CMOS fiber optic detector systems; planar amorphous Si/sub 1-x/Ge/sub x/ separated-absorption-multiplication APD; responsivity; short-distance optical-fiber communication systems; spectral response; Absorption; Amorphous materials; CMOS process; Crystalline materials; Crystallization; Indium phosphide; Ionization; Photonic band gap; Semiconductor diodes; Silicon alloys;
Journal_Title :
Electron Device Letters, IEEE
