Title :
Unpinned GaAs MOS capacitors and transistors
Author :
Tiwari, Sandip ; Wright, Steven L. ; Batey, John
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Metal-oxide-semiconductor (MOS) capacitors and field-effect transistors (MOSFETs) in the GaAs semiconductor system using an unpinned interface are described. The structures utilize plasma-enhanced chemical-vapor deposition (PECVD) for the silicon-dioxide insulator on GaAs that has been terminated with a few monolayers of silicon during growth by molecular beam epitaxy. Interface densities in the structures have been reduced to approximately 10/sup 12/ cm/sup -2/.eV/sup -1/. High-frequency characteristics indicate strong inversion of both p-type and n-type GaAs. The excellent insulating quality of the oxide has allowed demonstration of quasi-static characteristics. MOSFETs operating in depletion mode with a transconductance of 60 mS/mm at 8.0- mu m gate lengths have been fabricated.<>
Keywords :
III-V semiconductors; capacitors; gallium arsenide; insulated gate field effect transistors; semiconductor technology; silicon compounds; 8 micron; GaAs; GaAs MOS capacitors; GaAs MOSFET; HF characteristics; MBE; PECVD; Si monolayers; SiO/sub 2/-Si-GaAs; depletion mode; gate lengths; interface densities; molecular beam epitaxy; plasma-enhanced chemical-vapor deposition; quasi-static characteristics; strong inversion; transconductance; unpinned interface; Chemicals; FETs; Gallium arsenide; Insulation; MOS capacitors; MOSFETs; Molecular beam epitaxial growth; Plasma chemistry; Plasma density; Silicon;
Journal_Title :
Electron Device Letters, IEEE
