InGaAs metal-semiconductor field-effect transistor with Langmuir-Blodgett deposited gate structure

Author

Chan, W.K. ; Chang, Gee-Kung ; Bhat, Rajaram ; Schlotter, N.E.

Author_Institution

Bell Commun. Res., Red Bank, NJ, USA

Volume

9

Issue

5

fYear

1988

fDate

5/1/1988 12:00:00 AM

Firstpage

220

Lastpage

222

Abstract

A high-transconductance n-channel, depletion-mode InGaAs metal-semiconductor field-effect transistor (MESFET) with a Langmuir-Blodgett deposited gate fabricated on organometallic chemical vapor deposition (OMCVD)-grown InGaAs lattice matched to InP is reported. The fabrication process is similar to epitaxial GaAs FET technology and is suitable for making optoelectronic integrated circuits (OEICs) for long-wavelength fiber-optic communications systems. Devices with 1- mu m gate and 6*10/sup 16/ channel doping achieved 162-mS/mm extrinsic transconductance and -1.8-V pinch-off voltage. The effective saturation velocity of electrons in the channel was measured to be between 3.5 and 3.9*10/sup 7/ cm/s. The drain current (I/sub dss/), 300 mA/mm at V/sub ds/=2.5 V, is the highest current capability reported for depletion-mode InGaAs MESFET devices with low pinch-off voltages.<>

Keywords

III-V semiconductors; Langmuir-Blodgett films; Schottky gate field effect transistors; gallium arsenide; indium compounds; integrated optoelectronics; 1 micron; 162 mS; InGaAs-InP; InP; Langmuir-Blodgett deposited gate structure; OMCVD; channel doping; current capability; drain current; extrinsic transconductance; gate length; long-wavelength fiber-optic communications; n-channel depletion mode MESFET; optoelectronic integrated circuits; organometallic chemical vapor deposition; pinch-off voltage; saturation electron velocity; Chemical technology; Chemical vapor deposition; FETs; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Integrated circuit technology; Lattices; MESFETs; Optical device fabrication;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.696

Filename

696