DocumentCode
1400506
Title
Some advantages of silicon transistors in circuit design
Author
McPhun, M.K.
Author_Institution
United Kingdom Atomic Energy Authority, Development and Engineering Group, Warrington, UK
Volume
108
Issue
41
fYear
1961
fDate
9/1/1961 12:00:00 AM
Firstpage
570
Lastpage
575
Abstract
After transistors had been used for industrial instrumentation within the Development and Engineering Group of the United Kingdom Atomic Energy Authority for some years, silicon transistors were adopted for general-purpose use, as they were expected to be more reliable than germanium transistors. It has since become apparent that they possess more advantages over germanium transistors than is generally recognized, or was thought at the time of their adoption. For example, direct coupling of transistor circuits is facilitated and the number of components required may be much reduced; the use electrolytic capacitors may be avoided. The paper compares the performance of silicon and germanium transistors from the viewpoint of the circuit designer; physical origins of their characteristics are not discussed. A range of circuits which take advantage of the characteristics peculiar to silicon transistors is described. The circuits are for direct-coupled amplifiers, current amplifiers for small signals, switching applications and multivibrators with long periods.
Keywords
pulse circuits; transistors;
fLanguage
English
Journal_Title
Proceedings of the IEE - Part B: Electronic and Communication Engineering
Publisher
iet
ISSN
0369-8890
Type
jour
DOI
10.1049/pi-b-2.1961.0098
Filename
5244555
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