Title :
Doping-induced bandwidth enhancement in metal-semiconductor-metal photodetectors
Author :
Burroughes, J.H. ; Rogers, D.L. ; Arjavalingam, G. ; Pettit, G.D. ; Goorsky, M.S.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Height, NY, USA
fDate :
7/1/1991 12:00:00 AM
Abstract :
A novel technique is demonstrated for enhancing metal-semiconductor-metal photodetector bandwidths without reducing responsivity. The authors have observed bandwidth increases of up to 10 GHz from control to enhanced photodetectors which corresponds to about 70% enhancement. This technique involves modifying the internal electric field structure, by introducing a buried n-type doped layer that is completely depleted, to reduce the relatively long hole transit time.<>
Keywords :
infrared detectors; metal-semiconductor-metal structures; photodetectors; semiconductor doping; 0.85 micron; 10 GHz; buried n-type doped layer; doping induced bandwidth enhancement; hole transit time; internal electric field structure; metal-semiconductor-metal photodetectors; responsivity; Bandwidth; Capacitance; Detectors; Gallium arsenide; Indium phosphide; Optical noise; Optical receivers; PIN photodiodes; Photodetectors; RAKE receivers;
Journal_Title :
Photonics Technology Letters, IEEE
