Title :
H-MESFET compatible GaAs/AlGaAs MSM photodetector
Author :
Burroughes, J.H.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Height, NY, USA
fDate :
7/1/1991 12:00:00 AM
Abstract :
GaAs/Al/sub 0.3/Ga/sub 0.7/As short wavelength metal-semiconductor-metal photodetectors (MSM-PDs), compatible with GaAs heterostructure MESFET technologies have been fabricated. Detector bandwidths greater than 3.5 GHz were observed for lambda =800-850 nm. Due to the GaAs/AlGaAs heterojunction, low-frequency gain which is observed in GaAs MSM-PDs was minimized. The internal quantum efficiency was close to 100% and the dark currents were less than 1 nA for large-area detectors.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; infrared detectors; integrated optoelectronics; metal-semiconductor-metal structures; photodetectors; 3.5 GHz; 800 to 850 nm; GaAs heterostructure MESFET technologies; GaAs-Al/sub 0.3/Ga/sub 0.7/As; H-MESFET compatible GaAs/AlGaAs MSM photodetector; III-V semiconductor; bandwidths; dark currents; internal quantum efficiency; large-area detectors; low-frequency gain; short wavelength metal-semiconductor-metal; Bandwidth; Dark current; Detectors; Fingers; Gallium arsenide; MESFET integrated circuits; Optical interconnections; Optical noise; Optical receivers; Photodetectors;
Journal_Title :
Photonics Technology Letters, IEEE
