Title :
Suppression of hot-carrier effects in submicrometer CMOS technology
Author :
Chen, Min-liang ; Leung, Chung-wai ; Cochran, W.T. ; Jüngling, Werner ; Dziuba, Charles ; Yang, Tungsheng
Author_Institution :
AT&T Bell Lab., Allentown, PA, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
Approaches used to suppress the hot-carrier effects in submicrometer CMOS technology based on the drain engineering of the device structure and process-induced deice degradation are discussed. Different types of lightly doped drain (LDD) structures are studied. Several process-related device aging issues are discussed. Twin-Tub V CMOS technology is used as an example of how to manage the hot-carrier issues with respect to the process integration aspects
Keywords :
CMOS integrated circuits; VLSI; hot carriers; integrated circuit technology; semiconductor technology; LDD structure types; Twin-Tub V CMOS technology; VLSI; device structure; drain engineering; example; hot carrier effect suppression; lightly doped drain; process integration aspects; process-induced deice degradation; process-related device aging issues; submicrometer CMOS technology; submicron; Aging; CMOS process; CMOS technology; Chemical technology; Degradation; Hot carrier effects; Hot carrier injection; Hot carriers; Hydrogen; Impact ionization;
Journal_Title :
Electron Devices, IEEE Transactions on
