Analytical model of low-frequency diffusion noise in GaAs MESFETs

Author

Li, Zhan-Ming ; McAlister, Sean P. ; Day, Derek J.

Author_Institution

Nat. Res. Council of Canada, Ottawa, Ont., Canada

Volume

38

Issue

2

fYear

1991

fDate

2/1/1991 12:00:00 AM

Firstpage

232

Lastpage

236

Abstract

A simple analytical formula for the low-frequency noise (below 10 kHz) in GaAs MESFETs is derived. This unipolar model describes noise generated in the semi-insulating substrate and involves diffusion, drift, and generation-recombination due to deep-level traps. The derived noise spectrum is diffusion-like and rolls off as f^-3/2 at the high-frequency limit. The results are formally identical to the conventional diffusion/drift noise spectrum except the diffusion/drift constants are replaced by their reduced counterparts. Good qualitative agreement with experiments has been obtained for temperature, length, and field dependences. The derived spectrum can be computed quickly and is suitable for use in circuit simulation of low-frequency performance of MESFETs

Keywords

III-V semiconductors; Schottky gate field effect transistors; deep levels; electron device noise; gallium arsenide; random noise; semiconductor device models; 1D model; analytical formula; analytical model; circuit simulation; deep-level traps; diffusion equation; diffusion/drift constants; field dependences; high-frequency limit; length dependence; low-frequency diffusion noise; noise spectrum; semiinsulating substrate; temperature dependence; unipolar model; Analytical models; Charge carrier processes; Circuit noise; Electron traps; Frequency; Gallium arsenide; Impurities; Low-frequency noise; MESFETs; Noise generators;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.69899

Filename

69899