Low-frequency noise in depletion-mode SIMOX MOS transistors

Author

Elewa, Tarek ; Boukriss, Boubaker ; Haddara, Hisham S. ; Chovet, Alain ; Cristoloveanu, Sorin

Author_Institution

Lab. de Phys. des Composants a Semicond., Grenoble, France

Volume

38

Issue

2

fYear

1991

fDate

2/1/1991 12:00:00 AM

Firstpage

323

Lastpage

327

Abstract

Low-frequency noise measurements in depletion-mode SIMOX MOSFETs are reported. A simple model provides a reliable interpretation of the low-frequency noise in multi-interface depletion-mode transistors. An experimental procedure to separate noise contributions of front and back interfaces from noise due to bulk carrier fluctuations is described. The noises generated in the thin Si film and at the two Si-SiO₂ interfaces can be identified and characterized independently in terms of bulk properties and interface trap densities. Single-level traps at the back interface and defects in the volume are detected in high-temperature annealed materials

Keywords

MOS integrated circuits; electron device noise; electron traps; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; LF noise; MOSFETs; SIMOX MOS transistors; Si-SiO₂ interfaces; bulk carrier fluctuations; bulk properties; depletion-mode; high-temperature annealed materials; interface trap densities; low-frequency noise; model; Crystalline materials; Fluctuations; Low-frequency noise; MOSFETs; Noise generators; Noise level; Noise measurement; Semiconductor device noise; Semiconductor films; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.69913

Filename

69913