Title :
Stability of Mechanical Properties for Submicrometer Single-Crystal Silicon Cantilever Under Cyclic Load
Author :
Zhu, Yinfang ; Zhang, Fengxin ; Yang, Jinling ; Zheng, Haiyang ; Yang, Fuhua
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Abstract :
The stability of mechanical properties of submicrometer-thick cantilevers was systematically investigated under different conditions: driving force, vacuum, humidity, and temperature. For the submicrometer-thick cantilever, the cyclic test did not lead to failure but resulted in distinguish resonant frequency shift. The frequency shift is caused by fatigue stress, adsorption/desorption, and temperature-induced lever softening effect. At a vacuum of 10-3 Pa, the stress change makes a dominant contribution to the frequency shift, and the desorption induced lever softening is a secondary factor. The resonant fre quency continuously goes down with the cycles, and this frequency shift increases with the driving force of the lever. At a vacuum of 1 Pa, the resonant frequency is nearly unchanged until 109 cycles. Humid air accelerates water adsorption and dramatically enhances the lever stiffness, resulting in frequency increase. At room temperature, the Q factors of the lever change a little with the cycles in spite of the frequency decrease. At elevated temperature (100°C and 200°C), the frequency and Q factors increase with the cycles due to the dominant desorption.
Keywords :
adsorption; cantilevers; desorption; elasticity; fatigue; humidity; mechanical stability; softening; Q factors; cyclic test; desorption induced lever softening; driving force; fatigue stress; lever stiffness; mechanical properties; pressure 0.001 Pa; resonant frequency shift; submicrometer thick single crystal silicon cantilevers; temperature 293 K to 298 K; temperature induced lever softening effect; water adsorption; Cyclic; mechanical property; resonant frequency; stability; submicrometer-thick cantilever;
Journal_Title :
Microelectromechanical Systems, Journal of
DOI :
10.1109/JMEMS.2010.2093569