Title :
A unified current-voltage model for long-channel nMOSFETs
Author :
Park, Chan-Kwang ; Lee, Chang-Yeol ; Lee, Kwyro ; Moon, Byung-Jong ; Byun, Young Hee ; Shur, Michael
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Cheongryang, Seoul, South Korea
fDate :
2/1/1991 12:00:00 AM
Abstract :
A unified current-voltage model is developed for long-channel nMOSFETs. This model is based on the unified charge control model (UCCM), which agrees very well with quantum-mechanical calculation results assuming two-dimensional electron gas, as well as with experimental capacitance-voltage measurements for the inversion layer formed at the Si-SiO2 interface on (100) surface. Combining UCCM with a newly proposed universal mobility model at room temperature, a new continuous I-V model which shows excellent agreement with the experimental data for the entire operating regions of gate, drain, and substrate bias voltages is developed
Keywords :
insulated gate field effect transistors; semiconductor device models; (100) surface; MOSFET; Si-SiO2 interface; continuous I-V model; long-channel nMOSFETs; n-channel devices; room temperature; two-dimensional electron gas; unified charge control model; unified current-voltage model; universal mobility model; Capacitance measurement; Capacitance-voltage characteristics; Circuit simulation; Electrons; Integral equations; MOSFET circuits; Moon; Silicon; Temperature; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
