A unified current-voltage model for long-channel nMOSFETs

Author

Park, Chan-Kwang ; Lee, Chang-Yeol ; Lee, Kwyro ; Moon, Byung-Jong ; Byun, Young Hee ; Shur, Michael

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Cheongryang, Seoul, South Korea

Volume

38

Issue

2

fYear

1991

fDate

2/1/1991 12:00:00 AM

Firstpage

399

Lastpage

406

Abstract

A unified current-voltage model is developed for long-channel nMOSFETs. This model is based on the unified charge control model (UCCM), which agrees very well with quantum-mechanical calculation results assuming two-dimensional electron gas, as well as with experimental capacitance-voltage measurements for the inversion layer formed at the Si-SiO₂ interface on (100) surface. Combining UCCM with a newly proposed universal mobility model at room temperature, a new continuous I-V model which shows excellent agreement with the experimental data for the entire operating regions of gate, drain, and substrate bias voltages is developed

Keywords

insulated gate field effect transistors; semiconductor device models; (100) surface; MOSFET; Si-SiO₂ interface; continuous I-V model; long-channel nMOSFETs; n-channel devices; room temperature; two-dimensional electron gas; unified charge control model; unified current-voltage model; universal mobility model; Capacitance measurement; Capacitance-voltage characteristics; Circuit simulation; Electrons; Integral equations; MOSFET circuits; Moon; Silicon; Temperature; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.69923

Filename

69923