Title :
Sensitivity of High-Speed Lightwave System Receivers Using InAlAs Avalanche Photodiodes
Author :
Ong, Daniel S G ; Hayat, Majeed M. ; David, John P R ; Ng, Jo Shien
Author_Institution :
Electron. & Electr. Eng. Dept., Univ. of Sheffield, Sheffield, UK
Abstract :
Calculations based on a rigorous analytical model are carried out to compare the sensitivity of optical receivers that use InP and In0.52Al0.48As avalanche photodiodes (APDs). The model includes the effects of intersymbol interference, tunneling current, avalanche noise and its correlation with the stochastic avalanche duration, dead space, and transimpedance amplifier noise. For a 10-Gb/s system with a bit-error rate of 10-12, the optimum receiver sensitivity predicted for In0.52Al0.48As and InP APDs is -28.6 and -28.1 dBm, respectively, corresponding to a reduction of 11% in optical signal power for receivers using In0.52Al0.48As APDs. Thus, considering overall receiver sensitivity, the improvement offered by In0.52Al0.48As APDs over InP is modest.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; intersymbol interference; optical noise; optical receivers; tunnelling; InAlAs; InP; avalanche noise; avalanche photodiode; dead space; high speed lightwave system receiver; intersymbol interference; optical receiver; stochastic avalanche duration; transimpedance amplifier noise; tunneling current; Avalanche photodiodes (APDs); bandwidth; bit-error rate (BER); intersymbol interference (ISI); noise; receiver sensitivity; tunneling;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2098862