Title :
Building-in reliability into VLSI junctions
Author :
Mogul, H.C. ; McPherson, J.W. ; Parrill, T.M.
Author_Institution :
Deep Sub-Micron ASP Productization, Texas Instrum. Inc., Dallas, TX, USA
fDate :
11/1/1997 12:00:00 AM
Abstract :
A nondestructive test is presented for monitoring junction quality and reliability in a manufacturing environment. Using a properly selected two-temperature measurement of the activation energy associated with reverse-biased junction leakage, it was demonstrated that the activation energy was more sensitive to slight changes in junction quality than was the commonly used method of monitoring the ideality factor. The activation energy method was found to be an effective and efficient metric for controlling normal process variation. As such, this method was found to be an excellent tool for building-in quality and reliability into junctions
Keywords :
VLSI; integrated circuit reliability; integrated circuit testing; leakage currents; nondestructive testing; production testing; VLSI junctions; activation energy; junction quality; manufacturing environment; nondestructive test; process variation control; reliability; reverse-biased junction leakage; two-temperature measurement; Energy measurement; Leakage current; Manufacturing; Monitoring; Pollution measurement; Process control; Semiconductor device reliability; Semiconductor diodes; Temperature dependence; Very large scale integration;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
