Title :
Electron and hole traps in SiO2 films thermally grown on Si substrates in ultra-dry oxygen
Author :
Miki, Hiroshi ; Noguchi, Mitsuhiro ; Yokogawa, Ken Etsu ; Kim, Bo-Woo ; Asada, Kunihiro ; Sugano, Takuo
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
fDate :
12/1/1988 12:00:00 AM
Abstract :
The densities of electron and hole traps in SiO2 films, thermally grown on Si substrates in ultra-dry oxygen, were compared with those in SiO2 films grown in pyrogenic steam (wet-oxide films). The results show that ultra-dry-oxide films have an undetectable density of electron traps that is less that 1011/cm2 , and little interface-states generation during carrier injection. However, hole traps in ultra-dry-oxide films are high, (2.6±0.1)×1012/cm2 compared with (1.3±0.2)×1012/cm2 in wet-oxide films, and these increase by a factor of two with post-oxidation anneal in ultra-dry Ar. The results of electron spin resonance measurements of E´ centers in SiO2 films are consistent with the results of electrical measurements. These suggest that there is a tradeoff correlation between the density of electron traps and hole traps, with respect to the amount of water- or hydrogen-related defects in SiO2
Keywords :
electron traps; elemental semiconductors; hole traps; oxidation; silicon; silicon compounds; Si substrates; SiO2 films; SiO2 films thermally grown; SiO2 integrity; SiO2-H; SiO2-H2O; SiO2-Si; carrier injection; density of electron traps; electrical measurements; hole trap density; interface-states generation; oxide integrity; pyrogenic steam; tradeoff correlation; ultra dry O2; ultra-dry-oxide films; wet-oxide films; Annealing; Atmosphere; Charge carrier processes; Electric breakdown; Electric variables measurement; Electron traps; Oxidation; Oxygen; Paramagnetic resonance; Semiconductor films;
Journal_Title :
Electron Devices, IEEE Transactions on
