Title :
Electromechanical Stability of Flexible Nanocrystalline-Silicon Thin-Film Transistors
Author :
Chiu, I-Chung ; Huang, Jung-Jie ; Chen, Yung-Pei ; Cheng, I-Chun ; Chen, Jian Z. ; Lee, Min-Hung
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
3/1/2010 12:00:00 AM
Abstract :
We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain.
Keywords :
elemental semiconductors; flexible electronics; nanostructured materials; silicon; thin film transistors; Si; colorless polyimide foil substrates; electrical stability; electromechanical stability; electron field-effect mobilities; flexible nanocrystalline-silicon thin-film transistors; mechanical flexing; mechanical strain; threshold voltages; Mechanical strain; nanocrystalline silicon (nc-Si); semiconductor device measurements; silicon; stability; thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2039023
