Poly-Si TFTs With Three-Dimensional Finlike Channels Fabricated Using Nanoimprint Technology

Author

Chen, Henry J H ; Jhang, Jia-Rong ; Huang, Chien-Jen ; Chen, Sun-Zen ; Huang, Ju-Chun

Author_Institution

Dept. of Electr. Eng., Nat. Chi Nan Univ., Puli, Taiwan

Volume

32

Issue

2

fYear

2011

Firstpage

155

Lastpage

157

Abstract

This letter addresses the characteristics of polycrystalline-silicon (poly-Si) thin-film transistor (TFTs) with 3-D finlike channels fabricated using UV nanoimprint lithography. A transparent mold and poly-Si 3-D finlike channels with a line/space ratio of about 1:1 were fabricated and studied by SEM. The poly-Si TFTs with 3-D finlike channels, fabricated using a nanoimprint technique, have lower threshold voltage, higher ON/OFF current ratio, better subthreshold swing, higher field-effective mobility, and higher drain current than that with a single channel. The proposed approach can be utilized to fabricate high-performance poly-Si TFTs at low cost.

Keywords

elemental semiconductors; nanofabrication; nanolithography; scanning electron microscopy; semiconductor thin films; silicon; thin film transistors; SEM; Si; UV nanoimprint lithography; nanoimprint technology; polycrystalline-silicon thin film transistor; scanning electron microscope; three-dimensional finlike channels; Fin; nanoimprint; polycrystalline silicon (poly-Si); thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2090333

Filename

5665749