DocumentCode :
1401571
Title :
Modulation characteristics of high speed (f-3 dB=20 GHz) tunneling injection InP/InGaAsP 1.55 μm ridge waveguide lasers extracted from optical and electrical measurements
Author :
Klotzkin, David ; Syao, Kao-Chih ; Bhattacharya, Pallab ; Caneau, C. ; Bhat, R.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
15
Issue :
11
fYear :
1997
fDate :
11/1/1997 12:00:00 AM
Firstpage :
2141
Lastpage :
2146
Abstract :
High-performance multiquantum-well 1.55 μm InP-based tunneling injection lasers are fabricated using a conventional single mode ridge waveguide fabrication process and characterized. The lasers consist of an eight quantum-well strain-compensated gain region and a 30-Å InP tunneling barrier. The bandwidth of these lasers is measured to be 20 GHz with a damping limited bandwidth extracted from the K-factor (determined from optical modulation measurements) of 26 GHz. To our knowledge, this is the highest measured bandwidth recorded for an InP-based simple ridge waveguide structure. The differential gain is measured to be as high as 1×10-15 cm2, with a measured gain compression coefficient ε of 5×10-17 cm3. It is shown that the K-factor can also be extracted solely from measurements of the small signal electrical impedance. The carrier escape time τesc is determined to be 0.5 ns, independent of bias. This high frequency performance is achieved with a very simple device structure at room temperature under constant drive currents
Keywords :
III-V semiconductors; electric impedance; gallium arsenide; high-speed optical techniques; indium compounds; laser transitions; optical fabrication; optical modulation; quantum well lasers; ridge waveguides; tunnelling; waveguide lasers; 0.5 ns; 1.55 mum; 20 GHz; 26 GHz; 30 angstrom; InP tunneling barrier; InP-InGaAsP; K-factor; bandwidth; bias; carrier escape time; constant drive currents; conventional single mode ridge waveguide fabrication process; damping limited bandwidth; differential gain; eight quantum-well strain-compensated gain region; electrical measurements; gain compression coefficient; high frequency performance; high speed tunneling injection InP/InGaAsP 1.55 μm ridge waveguide lasers; high-performance MQW InP-based tunneling injection lasers; modulation characteristics; multiquantum-well; optical measurements; room temperature; small signal electrical impedance; Bandwidth; Damping; Gain measurement; Indium phosphide; Laser modes; Optical device fabrication; Optical waveguides; Quantum well lasers; Tunneling; Waveguide lasers;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.641535
Filename :
641535
Link To Document :
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