DocumentCode
1401573
Title
Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- 
/Metal Gates CMOS FinFETs for Multi-  into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (V<sub>Th</sub>) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ~40 mV/V), nearly symmetric V<sub>Th</sub>, low T<sub>inv</sub> (~1.4 nm), and high I<sub>on</sub> (~780 ¿A/¿m) for N/PMOS without any intentional strain enhancement.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>CMOS integrated circuits; MOSFET; high-k dielectric thin films; N/PMOS; drain-induced barrier lowering; fabricated devices; gate-first integration; high-k/metal gates CMOS FinFETs; multiVTh engineering; multiple threshold voltages; short-channel effect immunity; strain enhancement; system-on-a-chip; tunable work function metal gates; CMOS logic circuits; Degradation; Doping; Fabrication; FinFETs; High K dielectric materials; High-K gate dielectrics; Jamming; System-on-a-chip; Threshold voltage; FinFET; gate-first integration; high- <formula formulatype=)
$k$ /metal gates stack; tunable work function (TWF);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2009.2039097
Filename
5404737
Link To Document