Fabrication of a Low-Loss SSC Using High-Dose Electron Beam Lithography Exposure With Negative PMMA Resist

Author

Liu, Yan ; Xu, Xuejun ; Xing, Bo ; Yu, Yude ; Yu, Jinzhong

Author_Institution

Institue of Semicond., Beijing, China

Volume

22

Issue

7

fYear

2010

fDate

4/1/2010 12:00:00 AM

Firstpage

501

Lastpage

503

Abstract

A silicon-on-insulator optical fiber-to-waveguide spot-size converter (SSC) using poly-methylmethAcrylate (PMMA) is presented for integrated optical circuits. Unlike the conventional use of PMMA as a positive resist, it has been successfully used as a negative resist with high-dose electron exposure for the fabrication of ultrafine silicon wire waveguides. Additionally, this process is able to reduce the side-wall roughness, and substantially depresses the unwanted propagation loss. Exploiting this technology, the authors demonstrated that the SSC can improve coupling efficiency by as much as over 2.5 dB per coupling facet, compared with that of SSC fabricated with PMMA as a positive resist with the same dimension.

Keywords

electron resists; elemental semiconductors; integrated optics; light propagation; optical fibre fabrication; optical fibre losses; optical frequency conversion; optical polymers; optical waveguides; silicon; silicon-on-insulator; Si; coupling efficiency; high-dose electron beam lithography; integrated optical circuits; low-loss SSC fabrication; negative PMMA resist; optical fiber-to-waveguide spot-size converter; polymethylmethacrylate; propagation loss; side-wall roughness; silicon-on-insulator; ultrafine silicon wire waveguides; Silicon-on-insulator (SOI); spot-size converter (SSC);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2010.2040998

Filename

5404911