• DocumentCode
    1402068
  • Title

    Scaling properties of In0.7Ga0.3As buried-channel MOSFETs with atomic layer deposited gate dielectric

  • Author

    Xue, Feng ; Jiang, Aimin ; Zhao, Hang ; Chen, Yuanfeng ; Wang, Yannan ; Zhou, Fen ; Lee, Jeyull

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
  • Volume
    46
  • Issue
    25
  • fYear
    2010
  • Firstpage
    1694
  • Lastpage
    1695
  • Abstract
    Deep-submicron In0.7Ga0.3As buried-channel MOSFETs with various gate lengths down to 40 nm are demonstrated. In0.7Ga0.3As buried-channel MOSFETs were fabricated on an epitaxial wafer using an InP/In0.52Al0.48As double barrier. The device characteristics were analysed, including subthreshold swing, transconductance and drive current. Good scaling behaviour was observed for these III-V MOSFETs. For a 40-nm gate length device, the VT roll-off is around 100 mV, the subthreshold swing is 132 mV/dec and DIBL is 214 mV/V.
  • Keywords
    III-V semiconductors; MOSFET; atomic layer epitaxial growth; buried layers; gallium arsenide; indium compounds; nanotechnology; ALD gate dielectric; In0.7Ga0.3As; InP-In0.52Al0.48As; buried-channel MOSFET; double barrier; drive current; epitaxial wafer; scaling property; subthreshold swing; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.2960
  • Filename
    5665841
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1402068