DocumentCode :
1402118
Title :
Power Amplification at 0.65 THz Using InP HEMTs
Author :
Radisic, Vesna ; Leong, Kevin M K H ; Mei, Xiaobing ; Sarkozy, Stephen ; Yoshida, Wayne ; Deal, William R.
Author_Institution :
Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA
Volume :
60
Issue :
3
fYear :
2012
fDate :
3/1/2012 12:00:00 AM
Firstpage :
724
Lastpage :
729
Abstract :
In this paper, progress toward developing solid-state power-amplifier modules at 0.65 THz is reported. This work is enabled by a >;1 THz fMAX InP HEMT transistor with a 30-nm gate and an integrated circuit process specifically tailored for circuits operating at frequencies approaching 1 THz. The building block of the reported amplifier modules is an eight-stage terahertz monolithic integrated circuit (TMIC) amplifier. The first six stages of the TMIC use 20- transistors, while the final two output stages rely on two power-combined 20-μm transistors to increase the output power. For operation at 0.65 THz, the TMIC also relies on integrated electromagnetic transitions for direct coupling with the WR1.5 waveguide of the amplifier package. Two modules are reported, with the first module containing a single TMIC and demonstrating a peak saturated output power of 1.7 mW at 640 GHz with a measured small-signal gain ≥10 dB from 629 to 638 GHz. The second module features two power-combined TMICs to increase output power. This is done using a waveguide Y-junction as both the combiner and splitter. In test, this power-combined module reached a peak output power of 3 mW at 650 GHz and measured small-signal gain ≥10 dB from 625 to 640 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; coupled circuits; indium compounds; microwave amplifiers; millimetre wave amplifiers; power combiners; HEMT transistor; InP; TMIC amplifier; WR1.5 waveguide; amplifier package; combiner; direct coupling; eight-stage terahertz monolithic integrated circuit amplifier; electromagnetic transition; frequency 0.65 THz; frequency 629 GHz to 638 GHz; frequency 640 GHz; integrated circuit process; power 1.7 mW; power 3 mW; power amplification; power-combined module; size 20 mum; size 30 nm; solid-state power-amplifier module; splitter; waveguide Y-junction; Electromagnetic waveguides; Gain; Indium phosphide; MODFETs; Power generation; Power measurement; HEMT; millimeter wave; power amplifier; solid-state power amplifier (SSPA); sub-millimeter wave; terahertz monolithic integrated circuit (TMIC);
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2011.2176503
Filename :
6107600
Link To Document :
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