Title :
The Investigation of Nano-Roughening Effect on the Reliability Enhancement of Adhesive Bond for NEMS Manufacture Application
Author :
Yang, Chia-Yeh ; Cheng, Yu-Ting ; Hsu, Wen-Syang
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
5/1/2010 12:00:00 AM
Abstract :
The paper shows the importance of nano-roughening on the bonding interface to the reliability enhancement of adhesive bond for ensuring the continuation of packaging shrinkage from MEMS to NEMS. The roughening is realized via a nonuniformly etching characteristic of PR which is etched and then utilized as an etching mask for following silicon etching process. Ultraviolet adhesive for silicon-to-glass bonding is utilized for the verification of the nano-roughening effect on NEMS hermetic encapsulation. The average roughnesses of the silicon substrate before and after roughening are 0.4 nm and 12.4 nm, respectively. Experimental results show that the roughness increase of silicon substrate can effectively provide more than 30% bonding strength enhancement and 30% leakage reduction. In addition, stamp-and-stick test shows that nano-roughening indeed provides a better adhesive characteristic that can further ensure the success of the stamp-and-stick process for nano/microfabrication.
Keywords :
adhesive bonding; encapsulation; hermetic seals; nanoelectromechanical devices; reliability; MEMS; NEMS hermetic encapsulation; NEMS manufacture application; adhesive bond; bonding interface; bonding strength enhancement; etching mask; leakage reduction; microfabrication; nano-roughening effect; nanofabrication; nonuniformly etching characteristic; packaging shrinkage; reliability enhancement; silicon etching process; silicon substrate; silicon-to-glass bonding; stamp-and-stick process; stamp-and-stick test; ultraviolet adhesive; Hermetic encapsulation; nano-electromechanical systems (NEMS) manufacture; nano-roughening; scaling rule; ultraviolet (UV) adhesive bonding;
Journal_Title :
Advanced Packaging, IEEE Transactions on
DOI :
10.1109/TADVP.2009.2038235