DocumentCode :
1402195
Title :
Analysis of signal voltage in a semiconductor ring laser gyro
Author :
Numai, Takahiro
Author_Institution :
Res. Center, Canon Inc., Kanagawa, Japan
Volume :
36
Issue :
10
fYear :
2000
Firstpage :
1161
Lastpage :
1167
Abstract :
It is expected that a semiconductor ring laser is useful as a gyro because of its tiny size. Here, we propose to use as signals voltage changes in a semiconductor ring laser corresponding to rotation. These changes in the voltage during rotation are caused by an interference of clockwise and counterclockwise laser beams inside the ring cavity. In this paper, these signal voltages are analyzed for the first time by using rate equations, It is shown that the signal voltages saturate with an increase in the injection current into a semiconductor ring laser if gain saturation is neglected. When gain saturation is considered, there exists an optimum injection current to obtain a signal voltage as large as possible. To confirm validity of this analysis, a signal voltage below laser threshold is compared with that of a semiconductor optical amplifier, and good agreement is obtained.
Keywords :
gyroscopes; laser beams; laser cavity resonators; measurement by laser beam; optimisation; ring lasers; semiconductor lasers; below laser threshold; clockwise laser beams; counterclockwise laser beams; gain saturation; injection current; optimum injection current; ring cavity; semiconductor optical amplifier; semiconductor ring laser; semiconductor ring laser gyro signal voltage; Clocks; Equations; Interference; Laser beams; Laser transitions; Ring lasers; Semiconductor lasers; Semiconductor optical amplifiers; Signal analysis; Threshold voltage;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.880656
Filename :
880656
Link To Document :
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