Analysis of the linewidth of a grating-feedback GaAlAs laser

Author

Genty, G. ; Grohn, A. ; Talvitie, H. ; Kaivola, M. ; Ludvigsen, H.

Author_Institution

Metrol. Res. Inst., Helsinki Univ. of Technol., Espoo, Finland

Volume

36

Issue

10

fYear

2000

Firstpage

1193

Lastpage

1198

Abstract

Effects of external optical feedback from a reflection grating on the linewidth of a GaAlAs semiconductor laser operating at 780 nm are investigated. Accurate linewidth measurements as a function of the laser frequency tuning have been performed by applying the self-homodyne technique with a short delay line. A realistic coupled-cavity model, which incorporates the frequency-dependent reflection from the grating, is used to explain the measured data. The agreement between the theoretical and experimental results was found to be good.

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; laser cavity resonators; laser feedback; laser theory; laser transitions; optical delay lines; semiconductor device models; semiconductor lasers; spectral line breadth; 780 nm; GaAlAs; GaAlAs semiconductor laser; accurate linewidth measurements; external optical feedback; frequency-dependent reflection; grating-feedback GaAlAs laser; laser frequency tuning; linewidth; realistic coupled-cavity model; reflection grating; self-homodyne technique; short delay line; Frequency measurement; Gratings; Laser feedback; Laser modes; Laser theory; Laser tuning; Optical feedback; Optical reflection; Optical tuning; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.880660

Filename

880660